DMP45H4D9HJ3
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 450V 4.6A TO251
$0.82
Available to order
Reference Price (USD)
75+
$0.83027
Exquisite packaging
Discount
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The DMP45H4D9HJ3 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMP45H4D9HJ3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3, IPak, Short Leads
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