SCT3060ALHRC11
Rohm Semiconductor

Rohm Semiconductor
SICFET N-CH 650V 39A TO247N
$26.52
Available to order
Reference Price (USD)
1+
$20.09000
10+
$18.52700
25+
$17.69480
100+
$15.82110
450+
$15.09247
Exquisite packaging
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Discover the SCT3060ALHRC11 from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SCT3060ALHRC11 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 165W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3