SD1726
STMicroelectronics
STMicroelectronics
RF TRANS NPN 55V M174
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the SD1726, a high-performance RF Bipolar Junction Transistor (BJT) from STMicroelectronics, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The SD1726 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on STMicroelectronics for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 14dB
- Power - Max: 318W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: M174
- Supplier Device Package: M174
Related Products
NXP USA Inc.
BFR93A,235
onsemi
2N5770_D26Z
CEL
2SC5754-A
Fairchild Semiconductor
2N3663
CEL
2SC5455-A
Infineon Technologies
BFP405E6433HTMA1
NXP USA Inc.
BFG425W,115
Microsemi Corporation
SD1127
NXP USA Inc.
BFG25A/X,215
Infineon Technologies