SE20FJ-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.7A DO219AB
$0.09
Available to order
Reference Price (USD)
20,000+
$0.08370
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SE20FJ-M3/I from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's SE20FJ-M3/I for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 920 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 13pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Renesas Electronics America Inc
1SS221-T1B-A
Panjit International Inc.
FR1BAFC_R1_00001
Panjit International Inc.
BD5150YS_S2_00001
SMC Diode Solutions
S1D
Microchip Technology
1N6622US
Panjit International Inc.
SV1040_R1_00001
Panjit International Inc.
MBR3045_T0_00001
Rohm Semiconductor
RB160MM-40TFTR
Microchip Technology
JANTX1N5711UR-1
Diotec Semiconductor