SGB30N60ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 41A 250W TO263-3
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Upgrade your power management systems with the SGB30N60ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGB30N60ATMA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGB30N60ATMA1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 41 A
- Current - Collector Pulsed (Icm): 112 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 1.29mJ
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 44ns/291ns
- Test Condition: 400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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