IRGP35B60PDPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 60A 308W TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$6.67000
10+
$6.02800
100+
$4.99060
500+
$4.34576
1,000+
$3.78501
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IRGP35B60PDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGP35B60PDPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGP35B60PDPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
- Power - Max: 308 W
- Switching Energy: 220µJ (on), 215µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 26ns/110ns
- Test Condition: 390V, 22A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
Related Products
Infineon Technologies
IRGS4615DTRLPBF
Fairchild Semiconductor
SGR20N40LTM
IXYS
IXGH30N60BD1
Infineon Technologies
92-0235
Infineon Technologies
IRGPC40U
Infineon Technologies
IRG4P254SPBF
Infineon Technologies
AUIRGS4062D1TRL
IXYS
IXGR35N120C
Infineon Technologies
IKP40N65H5
STMicroelectronics