SGW30N60HS
Infineon Technologies
Infineon Technologies
IGBT, 41A, 600V, N-CHANNEL
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the SGW30N60HS Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGW30N60HS provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGW30N60HS for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 41 A
- Current - Collector Pulsed (Icm): 112 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 1.15mJ
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 20ns/250ns
- Test Condition: 400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Infineon Technologies
SIGC81T60SNCX1SA1
IXYS
IXGK35N120CD1
IXYS
IXGH24N60BU1
IXYS
IXDT30N120
STMicroelectronics
STGB20NB32LZ
Infineon Technologies
IKP03N120H2
Infineon Technologies
IRG4BC20F-SPBF
Infineon Technologies
IRG8P75N65UD1-EPBF
IXYS
IXGK64N60B3D1
Infineon Technologies