SI1056X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V SC89-6
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The SI1056X-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI1056X-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89 (SOT-563F)
- Package / Case: SOT-563, SOT-666
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