SI1400DL-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 1.6A SC70-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI1400DL-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI1400DL-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 568mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Rohm Semiconductor
RTR020N05TL
Infineon Technologies
BSS169 E6327
Infineon Technologies
IPD05N03LB G
Infineon Technologies
IPB65R280E6ATMA1
Infineon Technologies
SPB20N60S5ATMA1
STMicroelectronics
STF15NM60N
Vishay Siliconix
IRFR014TR
Infineon Technologies
BSR302NL6327HTSA1
Infineon Technologies
IRF6638TR1PBF
NXP USA Inc.