SI3812DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 2A 6TSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3812DV-T1-E3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI3812DV-T1-E3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 830mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IRFR2407TRRPBF
Vishay Siliconix
SIE836DF-T1-GE3
onsemi
NTHD5904NT3
Infineon Technologies
AUIRF2804WL
Infineon Technologies
IPB14N03LA
Fairchild Semiconductor
NDP6020P
Vishay Siliconix
IRFDC20
onsemi
MTB3N60E
onsemi
MCH3478-TL-W
Renesas Electronics America Inc