SI4102DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 3.8A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4102DY-T1-E3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SI4102DY-T1-E3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
NVTFS5811NLTAG
Renesas Electronics America Inc
RJK5030DPD-00#J2
IXYS
IXFT15N100Q
Rohm Semiconductor
RTR030N05TL
NXP USA Inc.
PSMN3R8-30LL,115
Infineon Technologies
SPB80N03S2L06T
Infineon Technologies
IRF7413PBF
onsemi
IRFU120_R4941
IXYS
IXFC80N10
Vishay Siliconix