Shopping cart

Subtotal: $0.00

SI4403BDY-T1-GE3

Vishay Siliconix
SI4403BDY-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 20V 7.3A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Related Products

Infineon Technologies

BSS214NW L6327

Infineon Technologies

BSP315P-E6327

Vishay Siliconix

IRFR024TRL

Nexperia USA Inc.

BUK762R0-40E,118

Wolfspeed, Inc.

E3M0065090D

Rohm Semiconductor

RDX060N60FU6

Infineon Technologies

AUIRFSL4010-306

Alpha & Omega Semiconductor Inc.

AOTF3N50

Vishay Siliconix

IRFP054

Top