SI4427BDY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 9.7A 8SO
$1.73
Available to order
Reference Price (USD)
2,500+
$0.64321
5,000+
$0.61301
12,500+
$0.59144
Exquisite packaging
Discount
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Optimize your power electronics with the SI4427BDY-T1-E3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI4427BDY-T1-E3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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