SI4463CDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 13.6A/49A 8SO
$0.98
Available to order
Reference Price (USD)
2,500+
$0.44280
5,000+
$0.42201
12,500+
$0.40716
25,000+
$0.40500
Exquisite packaging
Discount
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Enhance your electronic projects with the SI4463CDY-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SI4463CDY-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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