SI4497DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 36A 8SO
$1.97
Available to order
Reference Price (USD)
2,500+
$0.96368
5,000+
$0.93024
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI4497DY-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI4497DY-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
IRFP460LCPBF
Infineon Technologies
IPW65R060CFD7XKSA1
Diodes Incorporated
DMP2170U-13
Rohm Semiconductor
RD3L140SPFRATL
Microchip Technology
APT5014BLLG
Vishay Siliconix
SQS164ELNW-T1_GE3
STMicroelectronics
STP200NF03
Panjit International Inc.
PJL9420_R2_00001
Alpha & Omega Semiconductor Inc.
AOTF8N80
Diodes Incorporated