Shopping cart

Subtotal: $0.00

SI4823DY-T1-E3

Vishay Siliconix
SI4823DY-T1-E3 Preview
Vishay Siliconix
MOSFET P-CH 20V 4.1A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Related Products

Toshiba Semiconductor and Storage

SSM3J108TU(TE85L)

STMicroelectronics

STD12NF06-1

Diodes Incorporated

DMN2112SN-7

Renesas Electronics America Inc

RJJ0315DPA-00#J5A

Diodes Incorporated

ZVP4105ASTOA

Vishay Siliconix

SIR436DP-T1-GE3

Nexperia USA Inc.

PMN27UPH

Vishay Siliconix

2N7002-E3

Top