SI5402BDC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 4.9A 1206-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI5402BDC-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI5402BDC-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET™
- Package / Case: 8-SMD, Flat Lead
Related Products
Infineon Technologies
SPB21N10T
Toshiba Semiconductor and Storage
2SK4021(Q)
Infineon Technologies
IPD50R950CEATMA1
IXYS
IXFK150N15P
onsemi
MTP20N15E
Infineon Technologies
AUIRF3415
Taiwan Semiconductor Corporation
TSM2N100CP ROG
IXYS
IXFT74N20
IXYS
IXFK20N120
Vishay Siliconix