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SI5415EDU-T1-GE3

Vishay Siliconix
SI5415EDU-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 20V 25A PPAK
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® ChipFet Single
  • Package / Case: PowerPAK® ChipFET™ Single

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