SI6473DQ-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 6.2A 8TSSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SI6473DQ-T1-E3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI6473DQ-T1-E3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Related Products
Toshiba Semiconductor and Storage
TK12A60U(Q,M)
STMicroelectronics
STP6N120K3
Infineon Technologies
BSS215PL6327HTSA1
onsemi
FDD9410L-F085
Taiwan Semiconductor Corporation
TSM10N80CZ C0G
NXP Semiconductors
PMV42ENE215
IXYS
IXFB50N80Q2
Toshiba Semiconductor and Storage
TK8A60DA(STA4,Q,M)
Vishay Siliconix
IRF9Z14L
Vishay Siliconix