Shopping cart

Subtotal: $0.00

SI7476DP-T1-E3

Vishay Siliconix
SI7476DP-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 40V 15A PPAK SO-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

Infineon Technologies

IRF7477

Infineon Technologies

IPD5N03LAG

Infineon Technologies

IRF5802

Infineon Technologies

IPD040N03LG

Toshiba Semiconductor and Storage

2SK2962,T6F(J

Vishay Siliconix

IRFU214

Taiwan Semiconductor Corporation

TSM015NA03CR RLG

Infineon Technologies

SPP11N60CFDXKSA1

Top