SI7611DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 40V 18A PPAK1212-8
$1.72
Available to order
Reference Price (USD)
3,000+
$0.84005
6,000+
$0.81090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI7611DN-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI7611DN-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Panjit International Inc.
PJD4NA65_R2_00001
Infineon Technologies
IRFB4229PBF
onsemi
FDS4470
onsemi
FCP125N65S3R0
Alpha & Omega Semiconductor Inc.
AOTF288L
Infineon Technologies
IPA60R280CFD7XKSA1
onsemi
NTP65N02R
Microchip Technology
VN2222LL-G-P013
onsemi
FDC658P
Toshiba Semiconductor and Storage