SI7909DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 12V 5.3A 1212-8
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Elevate your electronics with the SI7909DN-T1-GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SI7909DN-T1-GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 37mOhm @ 7.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
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