SI8902EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 3.9A 6-MFP
$0.00
Available to order
Reference Price (USD)
3,000+
$0.90345
Exquisite packaging
Discount
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The SI8902EDB-T2-E1 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SI8902EDB-T2-E1 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1V @ 980µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-MICRO FOOT®CSP
- Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
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