SIA483ADJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 10.6A/12A PPAK
$0.15
Available to order
Reference Price (USD)
1+
$0.14834
500+
$0.1468566
1000+
$0.1453732
1500+
$0.1438898
2000+
$0.1424064
2500+
$0.140923
Exquisite packaging
Discount
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Optimize your power electronics with the SIA483ADJ-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIA483ADJ-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): +16V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
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