SIA915DJ-T4-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 30V SC70-6
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The SIA915DJ-T4-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SIA915DJ-T4-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 1.9W (Ta), 6.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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