SIDR608DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 45V 51A/208A PPAK
$1.29
Available to order
Reference Price (USD)
1+
$1.29195
500+
$1.2790305
1000+
$1.266111
1500+
$1.2531915
2000+
$1.240272
2500+
$1.2273525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIDR608DP-T1-RE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIDR608DP-T1-RE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
Related Products
Micro Commercial Co
MCAC95N065Y-TP
Panjit International Inc.
PJQ1916_R1_00001
Vishay Siliconix
SIHA125N60EF-GE3
Infineon Technologies
IPF014N08NF2SATMA1
onsemi
FQP13N50C-G
Infineon Technologies
IPL65R165CFDAUMA2
Vishay Siliconix
IRFR220PBF-BE3
IXYS
IXFT24N90P-TRL
Diodes Incorporated
DMG7702SFG-13
IXYS