IXTK3N250L
IXYS
IXYS
MOSFET N-CH 2500V 3A TO264
$70.23
Available to order
Reference Price (USD)
1+
$70.22640
500+
$69.524136
1000+
$68.821872
1500+
$68.119608
2000+
$67.417344
2500+
$66.71508
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTK3N250L from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTK3N250L for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
IXYS
IXTA180N10T7-TRL
IXYS
IXTT12N150HV-TRL
Diodes Incorporated
DMN3061LCA3-7
Diodes Incorporated
DMP6023LFGQ-13
Infineon Technologies
BSB280N15NZ3G
Renesas
UPA1759G-E1-A
Infineon Technologies
IPA029N06NM5SXKSA1
Harris Corporation
HUF75344S3
onsemi
NVMFWS014P04M8LT1G
onsemi