SIHA12N60E-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 600V
$2.65
Available to order
Reference Price (USD)
1+
$2.65000
500+
$2.6235
1000+
$2.597
1500+
$2.5705
2000+
$2.544
2500+
$2.5175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIHA12N60E-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIHA12N60E-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Rohm Semiconductor
R6504KNJTL
onsemi
FDC365P
onsemi
5LP01SP
Diodes Incorporated
DMNH10H021SPSW-13
Rohm Semiconductor
R6030JNZ4C13
onsemi
MCH6431-TL-H
Infineon Technologies
IPB60R190C6ATMA1
Alpha & Omega Semiconductor Inc.
AOD66920
STMicroelectronics
STD180N4F6
Infineon Technologies