SIHG32N50D-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 30A TO247AC
$3.46
Available to order
Reference Price (USD)
500+
$3.45608
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SIHG32N50D-E3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIHG32N50D-E3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Taiwan Semiconductor Corporation
TSM018NB03CR RLG
Infineon Technologies
BSS139H6327XTSA1
Infineon Technologies
BSC0402NSATMA1
Infineon Technologies
IPP80N04S2H4AKSA2
Fairchild Semiconductor
HUF76437S3S
Infineon Technologies
IPD60R210CFD7ATMA1
Infineon Technologies
IRF9335TRPBF
Vishay Siliconix
SQ4050EY-T1_GE3
Nexperia USA Inc.
PSMN017-80PS,127
Vishay Siliconix