SIHG35N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 32A TO247AC
$6.98
Available to order
Reference Price (USD)
1+
$7.38000
10+
$6.58900
100+
$5.40300
500+
$4.37510
1,000+
$3.68984
2,500+
$3.50535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG35N60E-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIHG35N60E-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPAW60R280CEXKSA1
Infineon Technologies
IRFH5304TRPBF
IXYS
IXTP32N65X
STMicroelectronics
STP20NK50Z
Vishay Siliconix
SUD50N04-8M8P-4GE3
IXYS
IXFA270N06T3
Rohm Semiconductor
RSS065N06FRATB
onsemi
SCH1332-TL-W
Vishay Siliconix
SQJ146ELP-T1_GE3
Diodes Incorporated