SIHP080N60E-GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET TO-220AB,
$4.60
Available to order
Reference Price (USD)
1+
$4.60000
500+
$4.554
1000+
$4.508
1500+
$4.462
2000+
$4.416
2500+
$4.37
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHP080N60E-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIHP080N60E-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB80P04P4L06ATMA2
Fairchild Semiconductor
FQP5N50C
Diodes Incorporated
DMP2045U-7
Nexperia USA Inc.
BUK762R4-60E,118
STMicroelectronics
STD12NF06L-1
Microchip Technology
APT17F100B
onsemi
2SK2628LS
onsemi
NTD4809NA-35G
Fairchild Semiconductor
IRFS820B
Infineon Technologies