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SIJ462DP-T1-GE3

Vishay Siliconix
SIJ462DP-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 60V 46.5A PPAK SO-8
$1.57
Available to order
Reference Price (USD)
3,000+
$0.70848
6,000+
$0.67522
15,000+
$0.65146
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 46.5A(Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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