SIRA14BDP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 21A/64A PPAK SO8
$0.54
Available to order
Reference Price (USD)
3,000+
$0.19062
6,000+
$0.17832
15,000+
$0.16602
30,000+
$0.15741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIRA14BDP-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIRA14BDP-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Panjit International Inc.
PJQ5461A-AU_R2_000A1
Vishay Siliconix
SUM40014M-GE3
Nexperia USA Inc.
PMXB56ENZ
onsemi
5LP01M-TL-H
Diodes Incorporated
DMG3401LSNQ-13
onsemi
NVHL080N120SC1
NXP USA Inc.
PHB18NQ10T,118
IXYS
IXTT10P60
Nexperia USA Inc.
PSMN2R0-30PL,127
Diodes Incorporated