SISA40DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 43.7A/162A PPAK
$0.84
Available to order
Reference Price (USD)
3,000+
$0.34324
6,000+
$0.32096
15,000+
$0.30983
30,000+
$0.30375
Exquisite packaging
Discount
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Optimize your power electronics with the SISA40DN-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SISA40DN-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 43.7A (Ta), 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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