SISS08DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 53.9/195.5A PPAK
$1.20
Available to order
Reference Price (USD)
3,000+
$0.54120
6,000+
$0.51579
15,000+
$0.49764
Exquisite packaging
Discount
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Enhance your electronic projects with the SISS08DN-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SISS08DN-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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