Shopping cart

Subtotal: $0.00

STB8N65M5

STMicroelectronics
STB8N65M5 Preview
STMicroelectronics
MOSFET N-CH 650V 7A D2PAK
$2.97
Available to order
Reference Price (USD)
1,000+
$1.40658
2,000+
$1.31990
5,000+
$1.27656
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Infineon Technologies

SPD50P03LGBTMA1

Vishay Siliconix

IRLU024PBF

Rectron USA

RM40N100LD

Infineon Technologies

IPB240N04S41R0ATMA1

Renesas Electronics America Inc

FS100VSJ-03F-T11X5

Microchip Technology

APT10M19SVRG

Renesas Electronics America Inc

TBB1005EMTL-H

Infineon Technologies

IPB025N10N3GATMA1

Top