SISS76LDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 70V 19.6A/67.4A PPAK
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SISS76LDN-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SISS76LDN-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70 V
- Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
- Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
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