SPB80N06S08ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$1.87
Available to order
Reference Price (USD)
1+
$1.86827
500+
$1.8495873
1000+
$1.8309046
1500+
$1.8122219
2000+
$1.7935392
2500+
$1.7748565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SPB80N06S08ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SPB80N06S08ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMT6016LFDF-7
Vishay Siliconix
TN2404K-T1-E3
Infineon Technologies
IRLTS6342TRPBF
IXYS
IXFX64N60P
Microchip Technology
APT1201R6BVFRG
Infineon Technologies
IRFB4137PBF
Toshiba Semiconductor and Storage
TK18A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK110E10PL,S1X
Alpha & Omega Semiconductor Inc.
AOTF2916L
Vishay Siliconix