SI4431CDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 9A 8SO
$0.80
Available to order
Reference Price (USD)
2,500+
$0.27120
5,000+
$0.25360
12,500+
$0.24480
25,000+
$0.24000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4431CDY-T1-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI4431CDY-T1-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Fairchild Semiconductor
FDI038AN06A0
Panjit International Inc.
PJMF120N60EC_T0_00001
STMicroelectronics
STU80N4F6
Infineon Technologies
IPD090N03LGATMA1
onsemi
2SK583
Vishay Siliconix
SI7619DN-T1-GE3
onsemi
NVMTS0D6N04CTXG
Infineon Technologies
ISP12DP06NMXTSA1
IXYS
IXFA22N60P3
Nexperia USA Inc.