SPP80N03S2-03
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3
$1.13
Available to order
Reference Price (USD)
1+
$1.13000
500+
$1.1187
1000+
$1.1074
1500+
$1.0961
2000+
$1.0848
2500+
$1.0735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SPP80N03S2-03 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SPP80N03S2-03 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
IXYS
IXTH75N10L2
STMicroelectronics
STFI7LN80K5
Vishay Siliconix
SUD35N10-26P-T4GE3
Infineon Technologies
IAUA250N04S6N007AUMA1
onsemi
FCPF7N60
STMicroelectronics
STW40N90K5
Infineon Technologies
BSC670N25NSFDATMA1
Vishay Siliconix
SIHD3N50D-GE3
Rohm Semiconductor
RSQ025P03HZGTR
Diodes Incorporated