SQJ152ELP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 123A PPAK SO-8
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SQJ152ELP-T1_GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SQJ152ELP-T1_GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Nexperia USA Inc.
PMPB29XNEAX
Diodes Incorporated
DMN4010LFG-7
Diodes Incorporated
DMT3020LFCL-7
Renesas Electronics America Inc
RJK0212DPA-00#J5A
onsemi
NVMFWS021N10MCLT1G
Harris Corporation
RFP2N08
Goford Semiconductor
G18P03D3
Nexperia USA Inc.
BUK9Y1R9-40HX
Micro Commercial Co
SI2312A-TP
GeneSiC Semiconductor