SQM50P06-15L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 60V 50A TO263
$2.73
Available to order
Reference Price (USD)
800+
$1.20965
1,600+
$1.11012
2,400+
$1.03356
5,600+
$0.99528
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQM50P06-15L_GE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SQM50P06-15L_GE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIR698DP-T1-GE3
onsemi
NVD5C632NLT4G
IXYS
IXTA130N10T-TRL
Infineon Technologies
IPZA65R029CFD7XKSA1
Diodes Incorporated
BSS138K-13
IXYS
IXTH110N25T
Diodes Incorporated
DMN2055U-7
Fairchild Semiconductor
FQB17N08TM
Infineon Technologies
IPB019N06L3GATMA1
Nexperia USA Inc.