SQS407ENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 16A PPAK1212-8W
$1.08
Available to order
Reference Price (USD)
3,000+
$0.41697
6,000+
$0.38991
15,000+
$0.37638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQS407ENW-T1_GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8W
- Package / Case: PowerPAK® 1212-8W
Related Products
Alpha & Omega Semiconductor Inc.
AOW20S60
onsemi
NTS4101PT1G
onsemi
NTD5C688NLT4G
Alpha & Omega Semiconductor Inc.
AON7318
Nexperia USA Inc.
PMT200EPEX
Infineon Technologies
IPP65R190CFD7AAKSA1
STMicroelectronics
STP43N60DM2
STMicroelectronics
STF25N80K5
IXYS
IXTT440N04T4HV
Diodes Incorporated