SS6P4CHM3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 6A 40V TO277A
$0.22
Available to order
Reference Price (USD)
6,500+
$0.22831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the SS6P4CHM3_A/I by Vishay General Semiconductor - Diodes Division represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Vishay General Semiconductor - Diodes Division's patented junction design, the SS6P4CHM3_A/I achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 3A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
Related Products
SMC Diode Solutions
SDUR2030CT
Power Integrations
LXA08T600C
GeneSiC Semiconductor
MBRT120200R
Vishay General Semiconductor - Diodes Division
UGB18BCTHE3_A/P
Vishay General Semiconductor - Diodes Division
BAV23C-HE3-18
Vishay General Semiconductor - Diodes Division
VBT6045CBP-E3/8W
Panjit International Inc.
SBM1045VDC_R2_00001
Rohm Semiconductor
RB085T-40HZC9
Panjit International Inc.
MBR10150DC_R2_00001
Taiwan Semiconductor Corporation