SSM6J507NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 10A 6UDFNB
$0.48
Available to order
Reference Price (USD)
3,000+
$0.15500
6,000+
$0.14500
15,000+
$0.14000
Exquisite packaging
Discount
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The SSM6J507NU,LF single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SSM6J507NU,LF is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
- Vgs (Max): +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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