STB27NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 21A D2PAK
$7.85
Available to order
Reference Price (USD)
1+
$7.85000
500+
$7.7715
1000+
$7.693
1500+
$7.6145
2000+
$7.536
2500+
$7.4575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STB27NM60ND single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STB27NM60ND combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHA15N50E-GE3
Nexperia USA Inc.
BUK9M14-40EX
Infineon Technologies
ISZ230N10NM6ATMA1
Renesas Electronics America Inc
2SK2729-E
Fairchild Semiconductor
FQB46N15TM
EPC
EPC2219
STMicroelectronics
STP46NF30
Vishay Siliconix
IRFB13N50APBF
Panjit International Inc.
PJQ5411_R2_00001
Infineon Technologies