STFW8N120K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1200V 6A TO3PF
$4.91
Available to order
Reference Price (USD)
1+
$4.90780
500+
$4.858722
1000+
$4.809644
1500+
$4.760566
2000+
$4.711488
2500+
$4.66241
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STFW8N120K5 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STFW8N120K5 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
Related Products
Vishay Siliconix
SUP70040E-GE3
Vishay Siliconix
SIA437DJ-T1-GE3
Vishay General Semiconductor - Diodes Division
VS-FC420SA15
STMicroelectronics
STFI15NM65N
IXYS
IXFJ80N25X3
Vishay Siliconix
SQJQ150E-T1_GE3
Toshiba Semiconductor and Storage
TPH8R008NH,L1Q
Infineon Technologies
BF5020WH6327
Vishay Siliconix
SIR616DP-T1-GE3
Rohm Semiconductor