STGB30V60F
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, V S
$0.00
Available to order
Reference Price (USD)
1,000+
$1.69575
2,000+
$1.59125
5,000+
$1.53900
Exquisite packaging
Discount
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Upgrade your power management systems with the STGB30V60F Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGB30V60F provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGB30V60F for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 383µJ (on), 233µJ (off)
- Input Type: Standard
- Gate Charge: 163 nC
- Td (on/off) @ 25°C: 45ns/189ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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