IXGP42N30C3
IXYS
IXYS
IGBT 300V 223W TO220AB
$0.00
Available to order
Reference Price (USD)
50+
$2.83500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGP42N30C3 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXGP42N30C3 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXGP42N30C3 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 250 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
- Power - Max: 223 W
- Switching Energy: 120µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 76 nC
- Td (on/off) @ 25°C: 21ns/113ns
- Test Condition: 200V, 21A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
onsemi
MGP15N40CL
Infineon Technologies
IRGP4740D-EPBF
Infineon Technologies
IRGSL10B60KDPBF
onsemi
FGH30N6S2D
Infineon Technologies
IRGR4607DTRLPBF
onsemi
FGP40N6S2
IXYS
IXGQ150N30TCD1
Infineon Technologies
IRG4BC30U
IXYS
IXGH30N60C3
STMicroelectronics