STGD7NB120S-1
STMicroelectronics
STMicroelectronics
IGBT 1200V 10A 55W IPAK
$0.00
Available to order
Reference Price (USD)
3,000+
$0.67914
Exquisite packaging
Discount
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Upgrade your power management systems with the STGD7NB120S-1 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGD7NB120S-1 provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGD7NB120S-1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
- Power - Max: 55 W
- Switching Energy: 15mJ (off)
- Input Type: Standard
- Gate Charge: 29 nC
- Td (on/off) @ 25°C: 570ns/-
- Test Condition: 960V, 7A, 1kOhm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251 (IPAK)
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